* Tue Aug 12 17:47:55 MEST 2003 * Fraunhofer IIS, Erlangen, Germany, 2003 * TSpice Model Library of a corecell-subset in "ams 0.35 um CMOS C35" .MODEL MODN NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : 2; * extracted : B10866 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =3.000e+00 * *** Threshold voltage related model parameters *** +K1 =5.0296e-01 +K2 =3.3985e-02 K3 =-1.136e+00 K3B =-4.399e-01 +NCH =2.611e+17 VTH0 =4.979e-01 +VOFF =-8.925e-02 DVT0 =5.000e+01 DVT1 =1.039e+00 +DVT2 =-8.375e-03 KETA =2.032e-02 +PSCBE1 =3.518e+08 PSCBE2 =7.491e-05 +DVT0W =1.089e-01 DVT1W =6.671e+04 DVT2W =-1.352e-02 * *** Mobility related model parameters *** +UA =4.705e-12 UB =2.137e-18 UC =1.000e-20 +U0 =4.758e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =1.415e-02 ETAB =-1.221e-01 +NFACTOR=4.136e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =6.948e-01 +PDIBLC1=3.571e-01 PDIBLC2=2.065e-03 DROUT =5.000e-01 +A0 =2.541e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.338e+05 AGS =2.408e-01 +B0 =4.301e-09 B1 =0.000e+00 DELTA =1.442e-02 +PDIBLCB=3.222e-01 * *** Geometry modulation related parameters *** +W0 =2.673e-07 DLC =3.0000e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =-1.297e-14 WWL =-9.411e-21 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.800e+00 +KT1 =-3.302e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =1.300e-10 CGSO =1.200e-10 CGBO =1.100e-10 +CGDL =1.310e-10 CGSL =1.310e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =3.449e+02 +CDSC =0.000e+00 CDSCB =1.500e-03 CDSCD =1.000e-03 +PRWB =-2.416e-01 PRWG =0.000e+00 CIT =4.441e-04 * *** Process and parameters extraction related model parameters *** +TOX =7.575e-09 NGATE =0.000e+00 +NLX =1.888e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.3600e+00 KF =5.1e-27 EF =1.000e+00 +NOIA =1.73e+19 NOIB =7.000e+04 NOIC =-5.64e-13 * *** Common extrinsic model parameters *** +LINT =-5.005e-08 WINT =9.4030e-08 XJ =3.000e-07 +RSH =7.000e+01 JS =1.000e-05 +CJ =9.400e-04 CJSW =2.500e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =3.400e-01 N =1.000e+00 MJSW =2.300e-01 +PB =6.900e-01 TT =0.000e+00 +PBSW =6.900e-01 * ---------------------------------------------------------------------- .SUBCKT ND A C PARAMS: AREA=1e-12 PERI=4e-6 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : DIODE * process : C35 * revision : 2; * extracted : B10866 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * TERMINALS: A=anode=P-region C=cathode=N-region * VARIABLES: M (mulitiplier), AREA [m^2], PERI [m]. * NOTE: The role of a protection DIODE is to conduct ESD current to VDD * (or from VSS). This forward bias is NOT modelled, only leakage current * and capacitance during normal operation. Any inductive load etc that * will give forward bias, must be limited by other components to within * Operating Conditions, otherwise parasitic bipolar action can occur. * D1 A C NDINSUBA {AREA} D2 A C NDINSUBS {PERI} .ENDS ND * .MODEL NDINSUBA D +IS =1.000e-05 N =1.000e+00 +CJO =9.400e-04 M =3.400e-01 VJ =6.900e-01 +TT =0.000e+00 FC =0.500e+00 +EG =1.110e+00 XTI =3.000e+00 +AF =1.000e+00 KF =0.000e+00 .MODEL NDINSUBS D +IS =0.000e+00 N =1.000e+00 +CJO =2.500e-10 M =2.300e-01 VJ =6.900e-01 +TT =0.000e+00 FC =0.500e+00 +EG =1.110e+00 XTI =3.000e+00 +AF =1.000e+00 KF =0.000e+00 * ---------------------------------------------------------------------- .MODEL MODNM NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : 2; * extracted : B11004 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =3.000e+00 * *** Threshold voltage related model parameters *** +K1 =7.4922e-01 +K2 =1.1026e-01 K3 =-3.776e+00 K3B =-7.691e-02 +NCH =2.265e+17 VTH0 =7.525e-01 +VOFF =-8.295e-02 DVT0 =3.000e+01 DVT1 =1.528e+00 +DVT2 =2.529e-02 KETA =3.585e-02 +PSCBE1 =4.309e+08 PSCBE2 =1.000e-10 +DVT0W =-5.000e+00 DVT1W =2.578e+06 DVT2W =5.105e-02 * *** Mobility related model parameters *** +UA =4.708e-10 UB =1.470e-18 UC =-4.342e-11 +U0 =5.643e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =3.795e-02 ETAB =-7.653e-04 +NFACTOR=8.573e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =2.125e-01 +PDIBLC1=1.000e-04 PDIBLC2=5.458e-04 DROUT =5.000e-01 +A0 =2.064e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.078e+05 AGS =1.079e-01 +B0 =-1.493e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=5.186e-01 * *** Geometry modulation related parameters *** +W0 =1.617e-07 DLC =1.0000e-07 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =-5.117e-14 WWL =-5.704e-21 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.760e+00 +KT1 =-4.502e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =1.080e-10 CGSO =1.080e-10 CGBO =1.100e-10 +CGDL =2.270e-10 CGSL =2.270e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.390e+03 +CDSC =0.000e+00 CDSCB =-1.500e-03 CDSCD =0.000e+00 +PRWB =-6.740e-02 PRWG =0.000e+00 CIT =0.000e+00 * *** Process and parameters extraction related model parameters *** +TOX =1.516e-08 NGATE =0.000e+00 +NLX =2.283e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.270e+00 KF =3.50e-27 EF =1.000e+00 +NOIA =6.64e+19 NOIB =1.090e+05 NOIC =-1.4e-13 * *** Common extrinsic model parameters *** +LINT =1.2250e-07 WINT =1.6230e-07 XJ =3.000e-07 +RSH =7.900e+01 JS =1.000e-05 +CJ =9.400e-04 CJSW =2.500e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =3.400e-01 N =1.000e+00 MJSW =2.300e-01 +PB =6.900e-01 TT =0.000e+00 +PBSW =6.900e-01 * ---------------------------------------------------------------------- .MODEL MODPM PMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : 2; * extracted : C64685 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =3.000e+00 * *** Threshold voltage related model parameters *** +K1 =5.4907e-01 +K2 =4.6395e-02 K3 =8.317e+00 K3B =-1.479e+00 +NCH =8.479e+16 VTH0 =-1.011e+00 +VOFF =-1.148e-01 DVT0 =5.399e-01 DVT1 =4.112e-01 +DVT2 =-9.479e-02 KETA =3.010e-02 +PSCBE1 =5.000e+09 PSCBE2 =1.000e-10 +DVT0W =8.099e-01 DVT1W =1.480e+05 DVT2W =4.404e-02 * *** Mobility related model parameters *** +UA =1.800e-12 UB =2.218e-18 UC =-7.278e-11 +U0 =1.373e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =9.736e-02 ETAB =-2.948e-02 +NFACTOR=7.046e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =4.395e+00 +PDIBLC1=2.037e-02 PDIBLC2=1.000e-20 DROUT =5.000e-01 +A0 =1.386e+00 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.436e+05 AGS =1.364e-01 +B0 =1.991e-08 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=1.000e+00 * *** Geometry modulation related parameters *** +W0 =1.000e-10 DLC =2.5000e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =-9.750e-16 WWL =-1.787e-21 WLN =1.000e+00 +WWN =1.040e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.300e+00 +KT1 =-6.003e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =9.100e-11 CGSO =9.100e-11 CGBO =1.100e-10 +CGDL =0.600e-10 CGSL =0.600e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.623e+03 +CDSC =1.214e-03 CDSCB =2.945e-04 CDSCD =0.000e+00 +PRWB =-4.521e-01 PRWG =0.000e+00 CIT =5.259e-05 * *** Process and parameters extraction related model parameters *** +TOX =1.450e-08 NGATE =0.000e+00 +NLX =2.231e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.5e+00 KF =9.4e-27 EF =1.000e+00 +NOIA =1.09e+18 NOIB =6.01e+03 NOIC =1.19e-12 * *** Common extrinsic model parameters *** +LINT =-8.504e-08 WINT =6.2030e-08 XJ =3.000e-07 +RSH =1.300e+02 JS =9.000e-05 +CJ =1.360e-03 CJSW =3.200e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =5.600e-01 N =1.000e+00 MJSW =4.300e-01 +PB =1.020e+00 TT =0.000e+00 +PBSW =1.020e+00 * ---------------------------------------------------------------------- .MODEL MODP PMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : 2; * extracted : C64685 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =3.000e+00 * *** Threshold voltage related model parameters *** +K1 =5.9959e-01 +K2 =-6.038e-02 K3 =1.103e+01 K3B =-7.580e-01 +NCH =9.240e+16 VTH0 =-6.915e-01 +VOFF =-1.170e-01 DVT0 =1.650e+00 DVT1 =3.868e-01 +DVT2 =1.659e-02 KETA =-1.440e-02 +PSCBE1 =5.000e+09 PSCBE2 =1.000e-04 +DVT0W =1.879e-01 DVT1W =7.335e+04 DVT2W =-6.312e-03 * *** Mobility related model parameters *** +UA =5.394e-10 UB =1.053e-18 UC =1.000e-20 +U0 =1.482e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =2.480e-01 ETAB =-3.917e-03 +NFACTOR=1.214e+00 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =3.184e+00 +PDIBLC1=1.000e-04 PDIBLC2=1.000e-20 DROUT =5.000e-01 +A0 =5.850e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =1.158e+05 AGS =2.468e-01 +B0 =8.832e-08 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=1.000e+00 * *** Geometry modulation related parameters *** +W0 =1.000e-10 DLC =2.4500e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =1.894e-16 WWL =-1.981e-21 WLN =1.000e+00 +WWN =1.040e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.300e+00 +KT1 =-5.403e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =8.600e-11 CGSO =8.600e-11 CGBO =1.100e-10 +CGDL =1.080e-10 CGSL =1.080e-10 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.033e+03 +CDSC =2.589e-03 CDSCB =2.943e-04 CDSCD =4.370e-04 +PRWB =-9.731e-02 PRWG =1.477e-01 CIT =0.000e+00 * *** Process and parameters extraction related model parameters *** +TOX =7.754e-09 NGATE =0.000e+00 +NLX =1.770e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.48e+00 KF =8.5e-27 EF =1.000e+00 +NOIA =1.52e+18 NOIB =7.75e+03 NOIC =5.0e-13 * *** Common extrinsic model parameters *** +LINT =-7.130e-08 WINT =3.4490e-08 XJ =3.000e-07 +RSH =1.290e+02 JS =9.000e-05 +CJ =1.360e-03 CJSW =3.200e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =5.600e-01 N =1.000e+00 MJSW =4.300e-01 +PB =1.020e+00 TT =0.000e+00 +PBSW =1.020e+00 * ---------------------------------------------------------------------- .SUBCKT PD A C PARAMS: AREA=1e-12 PERI=4e-6 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : DIODE * process : C35 * revision : 2; * extracted : C64685 ; 2002-12; ese(487) * doc# : ENG-182 REV_2 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * TERMINALS: A=anode=P-region C=cathode=N-region * VARIABLES: M (mulitiplier), AREA [m^2], PERI [m]. * NOTE: The role of a protection DIODE is to conduct ESD current to VDD * (or from VSS). This forward bias is NOT modelled, only leakage current * and capacitance during normal operation. Any inductive load etc that * will give forward bias, must be limited by other components to within * Operating Conditions, otherwise parasitic bipolar action can occur. * D1 A C PDINSUBA {AREA} D2 A C PDINSUBS {PERI} .ENDS PD * .MODEL PDINSUBA D +IS =9.000e-05 N =1.000e+00 +CJO =1.360e-03 M =5.600e-01 VJ =1.020e+00 +TT =0.000e+00 FC =0.500e+00 +EG =1.110e+00 XTI =3.000e+00 +AF =1.000e+00 KF =0.000e+00 .MODEL PDINSUBS D +IS =0.000e+00 N =1.000e+00 +CJO =3.200e-10 M =4.300e-01 VJ =1.020e+00 +TT =0.000e+00 FC =0.500e+00 +EG =1.110e+00 XTI =3.000e+00 +AF =1.000e+00 KF =0.000e+00 * ---------------------------------------------------------------------- .SUBCKT MODNH D G S B PARAMS: W=1e-6 L=1e-6 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 * VARIABLES: W,L,AD,AS,PD,PS,NRD,NRS = standard MOSFET parameters * M1 D1 G S B MODNHINSUB W={W} L={L} AD={AD} AS={AS} PD={PD} PS={PS} NRD={NRD} NRS={NRS} RD D1 D {1.328e+03*4.000e-06/(W)} TC=6.200e-03 .ENDS MODNH .MODEL MODNHINSUB NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : ; * extracted : C35 B11004.L2; 2002-11; hhl(5481) * doc# : REV_2.0 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =1.000e+00 * *** Threshold voltage related model parameters *** +K1 =6.2697e-01 +K2 =-4.966e-03 K3 =-2.240e+00 K3B =6.954e-01 +NCH =2.236e+17 VTH0 =4.460e-01 +VOFF =-5.090e-02 DVT0 =4.985e+01 DVT1 =1.296e+00 +DVT2 =1.311e-02 KETA =-4.553e-02 +PSCBE1 =1.000e+10 PSCBE2 =1.024e-05 +DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00 * *** Mobility related model parameters *** +UA =1.000e-30 UB =1.949e-18 UC =1.217e-10 +U0 =3.427e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =3.075e-02 ETAB =-5.261e-02 +NFACTOR=2.034e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =2.940e-01 +PDIBLC1=3.090e-02 PDIBLC2=6.375e-04 DROUT =5.000e-01 +A0 =1.893e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =2.402e+05 AGS =1.245e-01 +B0 =6.790e-08 B1 =0.000e+00 DELTA =1.729e-02 +PDIBLCB=2.067e-01 * *** Geometry modulation related parameters *** +W0 =1.145e-07 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +TNOM =2.700e+01 AT =3.300e+04 UTE =-1.800e+00 +KT1 =-3.302e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =1.200e-10 CGSO =1.200e-10 CGBO =1.100e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.092e+03 +CDSC =7.944e-03 CDSCB =0.000e+00 CDSCD =8.448e-05 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =1.000e-03 * *** Process and parameters extraction related model parameters *** +TOX =7.700e-09 NGATE =0.000e+00 +NLX =1.132e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.400e+00 KF =2.810e-27 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.400e-12 * *** Common extrinsic model parameters *** +LINT =6.0000e-07 WINT =2.6050e-08 XJ =3.000e-07 +RSH =8.200e+01 JS =6.000e-05 +CJ =8.000e-05 CJSW =5.100e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =3.900e-01 N =1.000e+00 MJSW =2.700e-01 +PB =5.300e-01 TT =0.000e+00 +PBSW =6.900e-01 * ---------------------------------------------------------------------- .SUBCKT MODNMH D G S B PARAMS: W=1e-6 L=1e-6 AD=0 AS=0 PD=0 PS=0 NRD=0 NRS=0 * VARIABLES: W,L,AD,AS,PD,PS,NRD,NRS = standard MOSFET parameters * M1 D1 G S B MODNMHINSUB W={W} L={L} AD={AD} AS={AS} PD={PD} PS={PS} NRD={NRD} NRS={NRS} RD D1 D {1.547e+03*4.000e-06/(W)} TC=6.200e-03 .ENDS MODNMH .MODEL MODNMHINSUB NMOS LEVEL=7 * ---------------------------------------------------------------------- ************************* SIMULATION PARAMETERS ************************ * ---------------------------------------------------------------------- * format : PSPICE * model : MOS BSIM3v3 * process : C35 * revision : ; * extracted : C35 B11004.L2; 2002-11; hhl(5481) * doc# : REV_2.0 * ---------------------------------------------------------------------- * TYPICAL MEAN CONDITION * ---------------------------------------------------------------------- * * *** Flags *** +MOBMOD =1.000e+00 CAPMOD =2.000e+00 +NOIMOD =1.000e+00 * *** Threshold voltage related model parameters *** +K1 =9.5409e-01 +K2 =4.9101e-02 K3 =-2.439e+00 K3B =4.077e-01 +NCH =2.092e+17 VTH0 =6.449e-01 +VOFF =-4.948e-02 DVT0 =4.985e+01 DVT1 =1.683e+00 +DVT2 =4.126e-02 KETA =-7.397e-02 +PSCBE1 =4.000e+10 PSCBE2 =1.000e-10 +DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00 * *** Mobility related model parameters *** +UA =1.000e-12 UB =3.768e-19 UC =6.391e-12 +U0 =4.394e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =1.616e-03 ETAB =-1.373e-02 +NFACTOR=3.455e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =1.055e-01 +PDIBLC1=1.000e-10 PDIBLC2=1.000e-10 DROUT =5.000e-01 +A0 =2.190e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =5.129e+04 AGS =9.448e-02 +B0 =-3.629e-08 B1 =0.000e+00 DELTA =3.370e-03 +PDIBLCB=3.872e-01 * *** Geometry modulation related parameters *** +W0 =6.289e-08 +DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +TNOM =2.700e+01 AT =3.300e+04 UTE =-1.760e+00 +KT1 =-4.502e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =1.080e-10 CGSO =1.080e-10 CGBO =1.100e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =5.304e+02 +CDSC =1.000e-02 CDSCB =0.000e+00 CDSCD =8.448e-05 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =8.122e-04 * *** Process and parameters extraction related model parameters *** +TOX =1.514e-08 NGATE =0.000e+00 +NLX =1.593e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.400e+00 KF =2.810e-27 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.400e-12 * *** Common extrinsic model parameters *** +LINT =6.1417e-07 WINT =4.9380e-08 XJ =3.000e-07 +RSH =7.946e+01 JS =6.000e-05 +CJ =8.000e-05 CJSW =5.100e-10 +CBD =0.000e+00 CBS =0.000e+00 IS =0.000e+00 +MJ =3.900e-01 N =1.000e+00 MJSW =2.700e-01 +PB =5.300e-01 TT =0.000e+00 +PBSW =6.900e-01 * ---------------------------------------------------------------------- * Owner: austriamicrosystems * HIT-Kit: Digital .SUBCKT DFC1 C D GND Q QN RN VDD M1 VDD C 1 VDD MODP L=350n W=1u ; (9.25 28.75 9.6 29.75) M2 4 D 19 VDD MODP L=350n W=1.6u ; (12.5 28.9 14.1 29.25) M3 VDD 5 3 VDD MODP L=350n W=1.95u ; (17.4 27.55 18.1 29.15) M4 5 4 VDD VDD MODP L=350n W=1.95u ; (18.55 27.55 19.25 29.15) M5 19 2 VDD VDD MODP L=350n W=1.6u ; (12.5 29.7 14.1 30.05) M6 8 2 6 VDD MODP L=350n W=1u ; (21.35 25.35 21.7 26.35) M7 2 1 VDD VDD MODP L=350n W=800n ; (10.3 27.425 11.1 27.775) M8 3 1 4 VDD MODP L=350n W=1u ; (12.5 27.55 13.5 27.9) M9 6 1 5 VDD MODP L=350n W=1u ; (20 25.35 20.35 26.35) M10 7 6 VDD VDD MODP L=350n W=1.95u ; (24.625 27.95 25.325 29.55) M11 3 RN VDD VDD MODP L=350n W=1.95u ; (16.25 27.55 16.95 29.15) M12 VDD RN 7 VDD MODP L=350n W=1.95u ; (25.775 27.95 26.475 29.55) M13 VDD 7 8 VDD MODP L=350n W=1.95u ; (23.475 27.95 24.175 29.55) M14 VDD 7 Q VDD MODP L=350n W=1.6u ; (28.4 26.05 28.75 27.65) M15 QN 8 VDD VDD MODP L=350n W=1.6u ; (29.75 26.05 30.1 27.65) M16 GND C 1 GND MODN L=350n W=500n ; (9.3 20.95 9.65 21.45) M17 4 D 18 GND MODN L=350n W=1u ; (13.375 21.6 13.725 22.6) M18 GND 5 17 GND MODN L=350n W=2u ; (17.25 20.95 17.6 22.95) M19 5 4 GND GND MODN L=350n W=1u ; (18.6 21.75 18.95 22.75) M20 6 2 5 GND MODN L=350n W=1u ; (19.95 21.75 20.3 22.75) M21 3 2 4 GND MODN L=350n W=1u ; (14.725 21.6 15.075 22.6) M22 2 1 GND GND MODN L=350n W=400n ; (10.575 21.85 10.975 22.2) M23 8 1 6 GND MODN L=350n W=1u ; (21.3 21.75 21.65 22.75) M24 18 1 GND GND MODN L=350n W=1u ; (12.575 21.6 12.925 22.6) M25 16 6 GND GND MODN L=350n W=2u ; (24.1 20.75 24.45 22.75) M26 7 RN 16 GND MODN L=350n W=2u ; (24.9 20.75 25.25 22.75) M27 17 RN 3 GND MODN L=350n W=2u ; (16.45 20.95 16.8 22.95) M28 GND 7 8 GND MODN L=350n W=1u ; (22.65 21.75 23 22.75) M29 GND 7 Q GND MODN L=350n W=1u ; (28.4 22.075 28.75 23.075) M30 QN 8 GND GND MODN L=350n W=1u ; (29.75 22.075 30.1 23.075) .ENDS .SUBCKT INV10 A GND Q VDD M1 VDD A Q VDD MODP L=350n W=4u ; (19.5 26.2 19.85 30.2) M2 Q A VDD VDD MODP L=350n W=4u ; (18.1 26.2 18.45 30.2) M3 VDD A Q VDD MODP L=350n W=4u ; (16.65 26.2 17 30.2) M4 Q A VDD VDD MODP L=350n W=4u ; (15.225 26.2 15.575 30.2) M5 GND A Q GND MODN L=350n W=2.5u ; (19.5 20.45 19.85 22.95) M6 Q A GND GND MODN L=350n W=2.5u ; (18.1 20.45 18.45 22.95) M7 GND A Q GND MODN L=350n W=2.5u ; (16.65 20.45 17 22.95) M8 Q A GND GND MODN L=350n W=2.5u ; (15.225 20.45 15.575 22.95) .ENDS .SUBCKT MUX21 A B GND Q S VDD *.PININFO A:I B:I S:I Q:O MM28 VDD A _net27 VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM26 _net27 S _net2 VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM25 _net2 _net1 _net24 VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM23 _net24 B VDD VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM22 VDD _net2 Q VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM21 _net1 S VDD VDD MODP L=0.35u W=0.8u M=1 AD=6.8e-13 AS=6.8e-13 PD=2.5u +PS=2.5u NRD=0.625 NRS=0.625 MM36 _net35 A GND GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM34 _net2 _net1 _net35 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 +PD=2.7u PS=2.7u NRD=0.5 NRS=0.5 MM33 _net32 S _net2 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM31 GND B _net32 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM30 Q _net2 GND GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM29 GND S _net1 GND MODN L=0.35u W=0.5u M=1 AD=4.25e-13 AS=4.25e-13 +PD=2.2u PS=2.2u NRD=1 NRS=1 .ENDS .SUBCKT NAND21 A B GND Q VDD *.PININFO A:I B:I Q:O MM11 VDD B Q VDD MODP L=0.35u W=0.8u M=1 AD=6.8e-13 AS=6.8e-13 PD=2.5u +PS=2.5u NRD=0.625 NRS=0.625 MM10 Q A VDD VDD MODP L=0.35u W=0.8u M=1 AD=6.8e-13 AS=6.8e-13 PD=2.5u +PS=2.5u NRD=0.625 NRS=0.625 MM13 _net1 B GND GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM12 Q A _net1 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 .ENDS .SUBCKT NAND31 A B C GND Q VDD M1 VDD C Q VDD MODP L=350n W=1.6u ; (-28.1 11.75 -27.75 13.35) M2 Q B VDD VDD MODP L=350n W=1.6u ; (-26.75 11.75 -26.4 13.35) M3 VDD A Q VDD MODP L=350n W=1.6u ; (-25.4 11.75 -25.05 13.35) M4 8 C GND GND MODN L=350n W=3.35u ; (-28.45 3.775 -27.4 6.425) M5 7 B 8 GND MODN L=350n W=3.35u ; (-27.325 3.775 -26.275 6.425) M6 Q A 7 GND MODN L=350n W=3.35u ; (-25.75 3.775 -24.7 6.425) .ENDS .SUBCKT NAND41 A B C D GND Q VDD M1 VDD D Q VDD MODP L=350n W=1.6u ; (-19.725 12.9 -19.375 14.5) M2 Q C VDD VDD MODP L=350n W=1.6u ; (-18.375 12.9 -18.025 14.5) M3 VDD B Q VDD MODP L=350n W=1.6u ; (-17.025 12.9 -16.675 14.5) M4 Q A VDD VDD MODP L=350n W=1.6u ; (-15.625 12.9 -15.275 14.5) M5 10 D GND GND MODN L=350n W=4.35u ; (-20.075 4.25 -18.7 7.575) M6 9 C 10 GND MODN L=350n W=4.35u ; (-19.275 4.25 -17.9 7.575) M7 8 B 9 GND MODN L=350n W=4.35u ; (-17.45 4.25 -16.075 7.575) M8 Q A 8 GND MODN L=350n W=4.35u ; (-16.65 4.25 -15.275 7.575) .ENDS .SUBCKT NOR21 A B GND Q VDD M1 6 B VDD VDD MODP L=350n W=3.2u ; (-24.425 9.1 -24.075 12.3) M2 Q A 6 VDD MODP L=350n W=3.2u ; (-23.075 9.1 -22.725 12.3) M3 Q B GND GND MODN L=350n W=1u ; (-24.425 3.775 -24.075 4.775) M4 GND A Q GND MODN L=350n W=1u ; (-23.075 3.775 -22.725 4.775) .ENDS .SUBCKT NOR31 A B C GND Q VDD M1 8 a q VDD MODP L=350n W=5.15u ; (-46.125 11.325 -44.125 14.825) M2 VDD c 7 VDD MODP L=350n W=5.15u ; (-44.525 11.325 -42.525 14.825) M3 7 b 8 VDD MODP L=350n W=5.15u ; (-45.325 11.325 -43.325 14.825) M4 q a GND GND MODN L=350n W=1u ; (-45.575 5.425 -45.225 6.425) M5 q c GND GND MODN L=350n W=1u ; (-42.875 5.425 -42.525 6.425) M6 GND b q GND MODN L=350n W=1u ; (-44.225 5.425 -43.875 6.425) .ENDS .SUBCKT NOR41 A B C D GND Q VDD M1 10 a VDD VDD MODP L=350n W=6.75u ; (-35.975 11.175 -33.175 15.475) M2 9 b 10 VDD MODP L=350n W=6.75u ; (-35.175 11.175 -32.375 15.475) M3 8 c 9 VDD MODP L=350n W=6.75u ; (-34.375 11.175 -31.575 15.475) M4 q d 8 VDD MODP L=350n W=6.75u ; (-33.575 11.175 -30.775 15.475) M5 GND a q GND MODN L=350n W=1u ; (-35.625 6 -35.275 7) M6 q b GND GND MODN L=350n W=1u ; (-34.275 6 -33.925 7) M7 GND c q GND MODN L=350n W=1u ; (-32.925 6 -32.575 7) M8 q d GND GND MODN L=350n W=1u ; (-31.575 6 -31.225 7) .ENDS .SUBCKT TIE0 GND Q VDD *.PININFO Q:O MM7 _net1 _net1 VDD VDD MODP L=0.5u W=4.75u M=1 AD=4.0375e-12 AS=4.0375e-12 +PD=6.45u PS=6.45u NRD=0.105263 NRS=0.105263 MM8 Q _net1 GND GND MODN L=0.5u W=2.95u M=1 AD=2.5075e-12 AS=2.5075e-12 +PD=4.65u PS=4.65u NRD=0.169492 NRS=0.169492 .ENDS .SUBCKT TIE1 GND Q VDD *.PININFO Q:O MM7 Q _net1 VDD VDD MODP L=0.5u W=4.75u M=1 AD=4.0375e-12 AS=4.0375e-12 +PD=6.45u PS=6.45u NRD=0.105263 NRS=0.105263 MM8 _net1 _net1 GND GND MODN L=0.5u W=2.95u M=1 AD=2.5075e-12 AS=2.5075e-12 +PD=4.65u PS=4.65u NRD=0.169492 NRS=0.169492 .ENDS .SUBCKT BUF4 A GND Q VDD M1 VDD 5 Q VDD MODP L=350n W=3.2u ; (25.975 26.75 26.325 29.95) M2 Q 5 VDD VDD MODP L=350n W=3.2u ; (24.625 26.75 24.975 29.95) M3 VDD A 5 VDD MODP L=350n W=1.6u ; (23.225 26.75 23.575 28.35) M4 GND 5 Q GND MODN L=350n W=2u ; (25.975 20.65 26.325 22.65) M5 Q 5 GND GND MODN L=350n W=2u ; (24.625 20.65 24.975 22.65) M6 GND A 5 GND MODN L=350n W=1u ; (23.225 21.65 23.575 22.65) .ENDS .SUBCKT XNR21 A B GND Q VDD *.PININFO A:I B:I Q:O MM21 VDD B _net20 VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM19 _net20 A Q VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 PD=3.3u +PS=3.3u NRD=0.3125 NRS=0.3125 MM18 Q _net3 VDD VDD MODP L=0.35u W=0.8u M=1 AD=6.8e-13 AS=6.8e-13 PD=2.5u +PS=2.5u NRD=0.625 NRS=0.625 MM17 _net3 A VDD VDD MODP L=0.35u W=0.4u M=1 AD=3.4e-13 AS=3.4e-13 PD=2.1u +PS=2.1u NRD=1.25 NRS=1.25 MM16 VDD B _net3 VDD MODP L=0.35u W=0.4u M=1 AD=3.4e-13 AS=3.4e-13 PD=2.1u +PS=2.1u NRD=1.25 NRS=1.25 MM27 _net26 A _net3 GND MODN L=0.35u W=0.5u M=1 AD=4.25e-13 AS=4.25e-13 +PD=2.2u PS=2.2u NRD=1 NRS=1 MM25 GND B _net26 GND MODN L=0.35u W=0.5u M=1 AD=4.25e-13 AS=4.25e-13 +PD=2.2u PS=2.2u NRD=1 NRS=1 MM24 GND B _net1 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM23 _net1 A GND GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM22 Q _net3 _net1 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 .ENDS .SUBCKT XOR21 A B GND Q VDD *.PININFO A:I B:I Q:O MM24 VDD A _net23 VDD MODP L=0.35u W=1.275u M=1 AD=1.08375e-12 +AS=1.08375e-12 PD=2.975u PS=2.975u NRD=0.392157 NRS=0.392157 MM22 _net23 B _net3 VDD MODP L=0.35u W=1.275u M=1 AD=1.08375e-12 +AS=1.08375e-12 PD=2.975u PS=2.975u NRD=0.392157 NRS=0.392157 MM21 _net1 B VDD VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM20 VDD A _net1 VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM19 _net1 _net3 Q VDD MODP L=0.35u W=1.6u M=1 AD=1.36e-12 AS=1.36e-12 +PD=3.3u PS=3.3u NRD=0.3125 NRS=0.3125 MM30 _net29 B GND GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM28 Q A _net29 GND MODN L=0.35u W=1u M=1 AD=8.5e-13 AS=8.5e-13 PD=2.7u +PS=2.7u NRD=0.5 NRS=0.5 MM27 GND _net3 Q GND MODN L=0.35u W=0.5u M=1 AD=4.25e-13 AS=4.25e-13 +PD=2.2u PS=2.2u NRD=1 NRS=1 MM26 _net3 A GND GND MODN L=0.35u W=0.4u M=1 AD=3.4e-13 AS=3.4e-13 PD=2.1u +PS=2.1u NRD=1.25 NRS=1.25 MM25 GND B _net3 GND MODN L=0.35u W=0.4u M=1 AD=3.4e-13 AS=3.4e-13 PD=2.1u +PS=2.1u NRD=1.25 NRS=1.25 .ENDS .SUBCKT DFC1_H C D GND Q QN RN VDD X1 C D GND Q QN RN VDD DFC1 .ENDS .SUBCKT INV10_H A GND Q VDD X1 A GND Q VDD INV10 .ENDS .SUBCKT MUX21_H A B GND Q S VDD *.PININFO A:I B:I S:I Q:O X1 A B GND Q S VDD MUX21 .ENDS .SUBCKT NAND21_H A B GND Q VDD *.PININFO A:I B:I Q:O X1 A B GND Q VDD NAND21 .ENDS .SUBCKT NAND31_H A B C GND Q VDD X1 A B C GND Q VDD NAND31 .ENDS .SUBCKT NAND41_H A B C D GND Q VDD X1 A B C D GND Q VDD NAND41 .ENDS .SUBCKT NOR21_H A B GND Q VDD X1 A B GND Q VDD NOR21 .ENDS .SUBCKT NOR31_H A B C GND Q VDD X1 A B C GND Q VDD NOR31 .ENDS .SUBCKT NOR41_H A B C D GND Q VDD X1 A B C D GND Q VDD NOR41 .ENDS .SUBCKT TIE0_H GND Q VDD *.PININFO Q:O X1 GND Q VDD TIE0 .ENDS .SUBCKT TIE1_H GND Q VDD *.PININFO Q:O X1 GND Q VDD TIE1 .ENDS .SUBCKT BUF4_H A GND Q VDD X1 A GND Q VDD BUF4 .ENDS .SUBCKT XNR21_H A B GND Q VDD *.PININFO A:I B:I Q:O X1 A B GND Q VDD XNR21 .ENDS .SUBCKT XOR21_H A B GND Q VDD X1 A B GND Q VDD XOR21 .ENDS